Professor Hudait directs a research laboratory focused on the heterogeneous integration of III-V and group-IV semiconductors, with emphasis on strained and bandgap‑engineered group-IV materials, compound semiconductor heterostructures, advanced characterization, and device processing. His group's current research includes group-IV quantum-well lasers, GeSn- and InAsSb-based tunable long-wavelength infrared photodetectors, quantum-well and tunnel FETs, and co-integrated Ge/InGa(Al)As CMOS technologies for energy-efficient nanoelectronics. The team investigates strain and bandgap engineering to enhance carrier mobility, defect engineering to improve material quality, and strategies for extending minority-carrier lifetime and enabling monolithic integration of alternative channel materials for future CMOS nodes. The results of his research have been reported in more than 215 archival journal and conference publications, and over 70 conference and seminar presentations.

Dr. Hudait has received numerous honors recognizing his contributions to semiconductor materials, device innovation, and engineering education. He received two Divisional Recognition Awards (DRA) from Intel Corporation for his pioneering work on III-V/Si integration: "Successful demonstration of high-performance III-V transistor on silicon substrate" (2008) and "Successful integration of III-V transistor layers on Si substrate" (2006). Earlier in his career, he received the Young Research Award (1998) for his paper presented at the 5th International Union of Materials Research Societies (IUMRS) Conference. His research on heterogeneous integration of arsenide-based quantum-well transistors for low-power logic applications and the extension of this work to composite high-k gate stacks on silicon, was recognized through multiple international media press releases in 2007 and 2009. Dr. Hudait's excellence in teaching and mentorship has been recognized through several major university-level awards at Virginia Tech, including: (1) "2026 College of Engineering Dean's Award for Excellence in Teaching", (2) "Excellence in Teaching Award, Center for Excellence in Teaching and Learning" (2026, 2021), (3) "Teacher of the Week" (2012, 2013), and (4) "Scholar of the Week" (2015). These awards highlight his commitment to integrating research and industry experience into the classroom, his student‑centered approach, and his sustained impact on undergraduate and graduate education.

Dr. Hudait's innovations in semiconductor materials and device technologies have resulted in a substantial intellectual property portfolio. He holds 60 issued U.S. patents, 15 European patent documents, 9 German Beta patents, and 2 Japanese abstracts, with more than 20 U.S. patents pending at the USPTO and 7 pre-patents filed through Virginia Tech. His patents span heterogeneous integration, strained and bandgap‑engineered materials, advanced transistor architectures, and next-generation CMOS and photonic device technologies.

Dr. Hudait has an extensive publication record spanning semiconductor materials, devices, and heterogeneous integration. He has authored over 215 peer-reviewed journal and conference papers, over 70 conference and seminar presentations and more than 20 invited and contributed conference presentations. His work continues to influence advanced CMOS technologies, group-IV photonics, and III-V/Si integration research worldwide.

After serving in Intel Corporation's Advanced Transistor and Nanotechnology Group, Dr. Hudait joined the Bradley Department of Electrical and Computer Engineering at Virginia Tech in 2009. At Intel, he led a joint research team from Intel and IQE that demonstrated the world's first InGaAs quantum‑well field-effect transistors grown on silicon substrates with a total buffer thickness of less than 1 micron. These devices operated at room temperature and achieved record power-delay performance at an ultra-low supply voltage of 0.5V. This breakthrough, recognized across both industry and academia, established a new pathway for high-speed and ultra-low-power transistor technologies on silicon, and was highlighted at premier international conferences and in leading scientific journals. Before joining Intel, Dr. Hudait was responsible for the research and development of compound-semiconductor-based thermophotovoltaics, photovoltaics, and their heterogeneous integration onto silicon, as well as high-electron-mobility transistors and emerging nanoelectronic devices using molecular beam epitaxy at The Ohio State University. Prior to his move to the United States, he led R&D programs in MOCVD growth and device processing of III-V compound semiconductors for space solar cell applications at the Indian Institute of Science (IISc), Bangalore. He was deputed to IISc from the Central Research Laboratory of Bharat Electronics Limited to develop high-efficiency space solar cells using advanced MOCVD growth techniques.